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| FVP12030IM3LEG1 Energy Recovery March 2007 FVP12030IM3LEG1 Energy Recovery Feature * Use of high speed 300V IGBTs with parallel FRDs * Single-grounded power supply by means of built-in HVIC * Sufficient current driving capability for IGBTs due to adding a buffer * Isolation rating of 1500Vrms/min. * Low leakge current due to using an insulated metal substrates PDP SPMTM General Description It is an advanced smart power module(SPMTM) that Fairchild has newly developed and designed to provide very compact and optimized performance for the energy recovery circuit of PDP driving system. It combines optimized circuit protection and drive matched to low-loss and high speed IGBTs. Under voltage lock-out protection function enhances the system reliability . The high speed built-in HVIC provides opto-couplerless single power supply IGBT gate driving capability that futher reduce the overall system size of PDP sustaining boards. Applications * Energy Recovery Part of a PDP (Plasma Display Panel) Package Outlines Figure 1. (c)2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FVP12030IM3LEG1 Rev. A FVP12030IM3LEG1 Energy Recovery Pin Configurations Top View Figure 2. 2 FVP12030IM3LEG1 Rev. A www.fairchildsemi.com FVP12030IM3LEG1 Energy Recovery Pin Descriptions Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 Pin Name COML VINL VCCL VBL GL VSL IGND COMH VINH VCCH VBH GH VSH CH EH KH AL CL EL Low-side Signal Ground Low-side Signal Input Low-side Supply Voltage for HVIC Pin Descriptions Low-side Floating Supply Voltage for Buffer IC and IGBT Driving Low-side Gate Low-side Floating Ground for Buffer IC and IGBT Driving IMS Ground High-side Signal Ground High-side Signal Input High-side Supply Voltage for HVICg High-side Floating Supply Voltage for Buffer IC and IGBT Driving High-side Gate High-side Floating Ground for Buffer IC and IGBT Driving High-side IGBT Collector High-side IGBT Emitter High-side Diode Cathode Low-side Diode Anode Low-side IGBT Collector Low-side IGBT Emitter 3 FVP12030IM3LEG1 Rev. A www.fairchildsemi.com FVP12030IM3LEG1 Energy Recovery Internal Equivalent Circuit and Input/Output Pins (Bottom View) (13) VSH (12) GH (11) VBH (14) CH HVIC (10) VCCH (9) VINH (8) COMH (7) IGND (16) KH (6) VSL (5) GL (4) VBL VCC IN COM VB OUT VS Buffer IC VCC IN COM COM OUT (15) EH (17) AL HVIC (3) VCCL (2) VINL (1) COML VCC IN COM VB OUT VS Buffer IC VCC IN COM COM OUT (18) CL (19) EL Figure 3. 4 FVP12030IM3LEG1 Rev. A www.fairchildsemi.com FVP12030IM3LEG1 Energy Recovery Absolute Maximum Ratings (T Symbol VCC VBS VIN C = 25C, Unless Otherwise Specified) Parameter Control Supply Voltage Control Bias Voltage Input Signal Voltage Conditions Applied between VCCL-COML, VCCH - COMH Applied between VBL - VSL, VBH - VSH Applied between VINL-COML,VINH - COMH Rating 20 20 -0.3~17 Units V V V Symbol VCE Parameter Collector to Emitter Voltage Conditions Between CL to EL, Between CH to EH VGH-EH=VGL-EL=0V , ICH=ICL=250A Between KH to EH, Between CL to AL IAH=IAL=250A Between CH to EH, Between CL to EL IAH=IAL=250A VINL, VINH Between CL to EL, Between CH to EH Between EH to KH, Between AL to CL per diode Between EH to CH Between EL to CL Rating 300 300 300 -0.3 to VCC+0.3 120 30 10 300 300 100 Units V V V V A A A A A A VRRM Peak Repetitive Reverse Voltage VIN IC IF(AV) ICP IFP Notes : Input Signal Voltage Collector Current Continuous Average Rectified Forward Current Pulsed Collector Current Pulsed Diode Current Between CL to EL, Between CH to EH (Note1) Between EH to KH, Between AL to CL(Note1) Between EH to CH Between EL to CL per diode (Note1) 1 Pulse Width = 100sec, Duty = 0.1; half sine wave *Icp limited by MAX Tj Symbol Parameter IGBT Dissipation Conditions Tc=25C per IGBT Tc=100C per IGBT Tc=25C per diode Tc=100C per diode Rating 117 47 109 43 -20 ~ 150 -20 ~ 125 -40 ~ 125 Units W W W W C C C Vrms Pd FRD Dissipation Tj TC TSTG VISO Operating Junction Temperture Module Case Operation Temperature Storage Temperature Isolation Voltage 60Hz, Sinusoidal, AC 1 minute, Connection Pins to IMS substrate 1500 Thermal Resistance Symbol Rth(j-c) Parameter Junction to Case Thermal Resistance Conditions Between CH to EH, Between CL to EL Per IGBT Between EH to KH, Between AL to CL Between CH to EH, Between CL to EL Per Diode Min. - Max. 1.07 1.15 3.70 Units C/W C/W C/W 5 FVP12030IM3LEG1 Rev. A www.fairchildsemi.com FVP12030IM3LEG1 Energy Recovery Electrical Characteristics (T Symbol IQCC IQBS UVBSD UVBSR VIN(ON) VIN(OFF) ON Threshold Voltage OFF Threshold Voltage C = 25C, Unless Otherwise Specified) Parameter Quiescent VCC Supply Current Quiescent VBS Supply Current Conditions VCC = 15V VINL, VINH = 0V VBS = 15V VINL, VINH= 0V VCCL-COML, VCCH-COMH VBL- VSL, VBH- VSH Min. 10.1 10.5 3.0 - Typ. 11.3 11.7 - Max. 100 500 12.5 12.9 0.8 Units A A V V V V Supply Circuit Under VoltDetection Level age Protection Reset Level Applied between VINL-COML, ,VINH - COMH Symbol VCE(SAT) Parameter IGBT Collector-Emitter Saturation Voltage Condition VCC = VBS = 15V VIN = 5V Between CL to AL Between KH to EH Between EH to CH Between EL to CL IC = 25A, TJ = 25C IC = 120A, TJ = 25C IF =30A, TJ = 25C IF =10A, TJ = 25C Min. - Typ. 1.9 230 55 270 48 Max. 1.4 1.4 1.7 Units V V V V ns ns ns ns VF Diode Forward Voltage tdON tr tdOFF tF ICES IGBT Collector-Emitter Leakage Current Diode Anode-Cathode Leakage Current Switching Times VCE=200V, VCC= VBS=15V Ic = 20A VIN = 0V V , Inductive Load Tc = 25C (Note2) VCE = 300V Between CL to AL Between KH to EH Between EH to CH Between EL to CL VAnode-Cathode=300V VAnode-Cathode=300V - - 250 250 A A A IR - - 250 Notes : 2 tON and tOFF include the propagation delay time of internal drive IC. For the detailed information, please see Figure 4. VIN VIN td(off) tf 90% of IC VCE 90% of IC IC IC td(on) 10% of IC VCE tr 10% of Ic Figure 4. Switching Time Definition 6 FVP12030IM3LEG1 Rev. A www.fairchildsemi.com FVP12030IM3LEG1 Energy Recovery Typical Performance Characteristics Figure 5. Typical Output Characteristics Figure 6. Typical Output Characteristics 180 T C = 25 C 150 20V o 180 T C = 125 C 150 20V 15V 120 10V o 12V Collector Current, IC [A] 15V 120 12V 10V Collector Current, IC [A] 90 90 V G E =8V 60 V G E =8V 30 60 30 0 0 2 4 6 0 0 2 4 6 Collector-Em itter Voltage, V CE [V] C ollector-E m itter V oltage, V C E [V ] Figure 7. Typical Forward Voltage Drop Figure 8. Typical Forward Voltage Drop 100 Between CL to AL Between KH to EH 100 FORWARD CURRENT, IF [A] TC = 100 C Forward Current, IF [A] TC = 25 C 10 o o Between CL to EL Between CH to EH TC = 125 C TC = 25 C 10 o o TC = 75 C o 1 1 0.1 0.0 0.5 1.0 1.5 2.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Forward Voltage, VF [V] FORWARD VOLTAGE. VF [V] Figure 9. FBSOA 50s 100 Ic MAX (Pulsed) 100s 1ms Collector Current, Ic [A] 10 1 0.1 0.01 0.1 Single Nonrepetitive o Pulse Tc=25 C Curves must be derated linearly with increase in temperature 1 10 100 1000 Collector-Emitter Voltage, VCE [V] 7 FVP12030IM3LEG1 Rev. A www.fairchildsemi.com FVP12030IM3LEG1 Energy Recovery Mechanical Characteristics and Ratings Parameter Mounting Torque Device Flatness Weight Mounting Screw: - M3 Conditions Recommended 0.62N*m Note Figure 5 Limits Min. 0.51 0 - Typ. 0.62 13.4 Max. 0.72 +100 - Units N*m m g Figure 10. Flatness Measurement Position 8 FVP12030IM3LEG1 Rev. A www.fairchildsemi.com FVP12030IM3LEG1 Energy Recovery Detailed Package Outline Drawings Figure 11. 9 FVP12030IM3LEG1 Rev. A www.fairchildsemi.com FVP12030IM3LEG1 Energy Recovery tm TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Across the board. Around the world.TM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM E2CMOSTM EcoSPARK(R) EnSignaTM FACT Quiet SeriesTM FACT(R) FAST(R) FASTrTM FPSTM FRFET(R) GlobalOptoisolatorTM GTOTM HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANAR(R) PACMANTM POPTM Power220(R) Power247(R) PowerEdgeTM PowerSaverTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM The Power Franchise(R) TM tm TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I24 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production 10 FVP12030IM3LEG1 Rev. A www.fairchildsemi.com |
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